Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser

Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

Spectral and temporal resolution of recombination from multiple excitation states in modulation-doped AlGaN/GaN multiple quantum well heterostructures

Time-resolved photoluminescence measurements of carrier lifetimes in modulation-doped s100 Åd AlxGa1−xN/ s100 Åd GaN multiple quantum well heterostructures are reported. The photoluminescence sPLd spectrum exhibits several lines associated with recombination of carriers from multiple excited electron states to the hole ground state. The PL decay times associated with ground state recombination,...

Optical properties of GaN/AlGaN multiple quantum well microdisks

Absorption bleaching by stimulated emission in erbium-doped silicon-rich silicon nitride waveguides.

Stimulated emission from sensitized erbium ions in silicon-rich silicon nitride is demonstrated by pump-probe measurements carried out in waveguides. A decrease in the photoinduced absorption of the probe at the wavelength of erbium emission is observed and is attributed to stimulated emission from erbium excited indirectly via localized states in the silicon nitride matrix.

Efficient linearly polarized ytterbium-doped fiber laser at 1120 nm.

We report a 20 W linearly polarized, spectrally clean Yb-doped fiber laser at 1120 nm with an optical conversion efficiency of 54%. An excellent polarization extinction ratio of more than 23 dB is obtained using fiber Bragg gratings (FBGs) polarization selection technique at all power levels. The results reveal that a Yb-doped fiber laser at 1120 nm could be a promising replacement compared to ...